NDLI: Residual and bending stress measurements by X-ray diffraction and synchrotron diffraction analysis in silicon solar cells

Content Provider	IEEE Xplore Digital Library
Author	Popovich, V.A. van der Pers, N. Janssen, M. Bennett, I.J. Jansen, K.M.B. Wright, J. Richardson, I.M.
Copyright Year	2012
Description	Author affiliation: ESRF, 6 Rue Jules Horowitz, BP 220, 38043 Grenoble, France (Wright, J.) \|\| Delft University of Technology, Department of Design Engineering, The Netherlands (Jansen, K.M.B.) \|\| Energy Research Centre of the Netherlands, PV Module Technology, Petten, The Netherlands (Bennett, I.J.) \|\| Delft University of Technology, Department of Materials Science & Engineering, The Netherlands (Popovich, V.A.; van der Pers, N.; Janssen, M.; Richardson, I.M.)
Abstract	The presence of residual stresses in multicrystalline silicon solar cells has become a problem of growing importance, especially in view of silicon wafer thickness reduction. Without increasing the wafer strength, this leads to a high fracture rate during subsequent handling and processing steps. The most critical processing step during the manufacture of screen-printed solar cells is the firing of metallic contacts. In this work we evaluate the development of mechanical stresses in metallic contacts (Al, Ag and Al/Ag bus bars) with respect to different processing steps. For this purpose we combine X-ray diffraction (XRD) stress measurements, Synchrotron measurements, cell bowing measurements with a laser scanning device and in-situ bending tests. Synchrotron diffraction analysis showed that there is a stress gradient in both Ag and Al layers. It was found that the Al back contact layer represents a very porous/loose microstructure, which does not affect the mechanical stability of the solar cell. It was also found that the thickness and composition of the eutectic layer are the most important factors influencing the bowing of a complete solar cell. Furthermore, residual stresses and stresses developing during cell bending in Ag, Al/Ag bus bars are measured and discussed in detail in this work.
Starting Page	000442
Ending Page	000447
File Size	1144916
Page Count	6
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317653
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Firing Displacement measurement Artificial intelligence X-ray scattering Thickness measurement Lead Stress metallic contacts residual stress multicrystalline silicon solar cells
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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