NDLI: Characterization of epitaxial film silicon solar cells grown on seeded display glass

Content Provider	IEEE Xplore Digital Library
Author	Young, D.L. Grover, S. Teplin, C. Stradins, P. LaSalvia, V. Ta-Ko Chuang Couillard, J.G. Branz, H.M.
Copyright Year	2012
Description	Author affiliation: National Renewable Energy Laboratory, Golden, CO, USA (Young, D.L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Branz, H.M.) \|\| Corning Incorporated, NY, USA (Ta-Ko Chuang; Couillard, J.G.)
Abstract	We report characterization of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (V) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 °C) hot-wire CVD (HWCVD) on $Corning^{®}$ EAGLE $XG^{®}$ display glass coated with a layer-transferred (LT) Si seed. The high V is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of epitaxial growth by HWCVD on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the growth surface. Complete heterojunction cells consist of glass/c-Si LT seed/ epi $n^{+}$ Si:P/epi $n^{−}$ Si:P/intrinsic $a-Si:H/p^{+}$ a-Si:H/ITO. Similar devices grown on electronically ‘dead’ $n^{+}$ wafers have given V ∼ 630 mV and ∼8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.
Starting Page	001841
Ending Page	001844
File Size	1624494
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317952
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Epitaxial growth Silicon Glass Substrates Rough surfaces Surface roughness solar energy epitaxial layers glass silicon
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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