NDLI: Thermal effusion measurements: Probing hydrogen in surface passivation schemes

Content Provider	IEEE Xplore Digital Library
Author	Dingemans, G. Beyer, W. Kessels, W.M.M.
Copyright Year	2012
Description	Author affiliation: IEK-5, Forschungszentrum Juelich GmbH, 52425, Germany (Beyer, W.) \|\| Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, The Netherlands (Dingemans, G.; Kessels, W.M.M.)
Abstract	Hydrogen is a vital component of surface passivation materials because it can diffuse towards the silicon interface and passivate surface and bulk defects during thermal treatment. To gain more insight into these complex processes, thermal effusion measurements are an innovative and technologically-relevant approach. During these experiments, thin films are heated under high vacuum conditions while the gaseous species released from bulk and surface are detected by a mass spectrometer. The temperature range (T= 200–1000°C) includes the range for activation of the surface passivation (typically, T= 350–500°C), but also the higher temperature range (T > 700°C) typically used during the metallization processes of solar cells. As case studies, we consider Al and Al:Er films. In addition, the effusion of inert gas atoms—implanted in the Al films— is discussed as a sensitive, complementary approach to study gas diffusion during annealing. We demonstrate that effusion measurements reveal significant differences in hydrogen diffusion and hydrogen loss for films with a range of structural properties. These results were consistently correlated with the thermal stability of the surface passivation.
Starting Page	001256
Ending Page	001259
File Size	1068937
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317830
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Films Passivation Annealing Thermal stability Aluminum oxide hydrogen Surface passivation silicon
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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