NDLI: Large area plan-view transmission electron microscopy sample preparation for multijunction metamorphic solar cell devices

Content Provider	IEEE Xplore Digital Library
Author	Jackson, M.J. Jackson, B.L. Bodzin, N. Zakaira, A. Liu, X.-Q. King, R.R. Goorsky, M.S.
Copyright Year	2012
Description	Author affiliation: Spectrolab, Inc., Sylmar, CA 91342 USA (Zakaira, A.; Liu, X.-Q.; King, R.R.) \|\| Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095 USA (Jackson, M.J.; Jackson, B.L.; Bodzin, N.; Goorsky, M.S.)
Abstract	A focused ion beam (FIB) sample preparation technique is developed to produce very large areas of electron transparent material for plan-view transmission electron microscopy measurements from specific layers in a multi-layer device structure. An initial cross section FIB cut allows plan-view sample creation from any layer of interest, and therefore rapid characterization of the defect density as a function of depth is achievable for structures containing multiple layers, such as multi-junction metamorphic layer structures for high efficiency III–V solar cells. Uniform electron transparent plan-view areas of greater than 100 $µm^{2}$ are extracted from a cross-section to facilitate observation of defect densities as low as ∼106 $cm^{‒2}.$ To demonstrate the technique, the active cell layers of two inverted metamorphic III–V solar cell structures have been imaged to reveal defect densities as high as $10^{9}$ $cm^{−2}$ and as low as $10^{6}$ $cm^{−2}.$
Starting Page	001620
Ending Page	001623
File Size	1393345
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317906
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Buffer layers Ion beams Substrates Performance evaluation Transmission electron microscopy metamorphic devices Defect characterization TEM plan view
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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