NDLI: Growth of multicrystalline silicon ingot from the top of the melt: Control of microstructures and reduction of stress

Content Provider	IEEE Xplore Digital Library
Author	Usami, N. Wugen Pan Matsushima, S. Nakajima, K. Watanabe, H.
Copyright Year	2012
Description	Author affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan (Usami, N.; Wugen Pan; Matsushima, S.; Watanabe, H.) \|\| Graduate School of Energy Science, Kyoto University, 606-8501, Japan (Nakajima, K.)
Abstract	We attempted to grow high-quality multicrystalline Si ingot based on solidification of Si melt from the top to the bottom in a crucible. Growth from the top of the melt permits to directly observe the initial stage of the crystal growth and control microstructures by utilizing dendrite crystals. Specially designed double crucibles were utilized to reduce introduction of the stress to the ingot especially at the final stage of the solidification so that generation of dislocations can be suppressed. The growth method was successfully implemented to fabricate multicrystalline Si ingot for practical size wafers.
Starting Page	002728
Ending Page	002730
File Size	461562
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318157
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Abstracts Indexes Heating silicon amorphous materials crystal microstructure photovoltaic cells rapid thermal processing
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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