NDLI: Electrochemical atomic layer deposition of a CdTe/PbTe superlattice for the absorber layer of a solar cell

Content Provider	IEEE Xplore Digital Library
Author	Singh, P. Kabalan, A.
Copyright Year	2012
Description	Author affiliation: Villanova University, PA, 19085, USA (Singh, P.; Kabalan, A.)
Abstract	Electrochemical Atomic Layer Deposition (ECALD) has been used to deposit CdTe and PbTe thin films. CdTe and PbTe are of interest in forming a superlattice structure to be used in the absorber layer of a solar cell. Cyclic voltammetry was used to study the Underpotential Deposition (UPD) of the constituent compounds. Pb was grown at a constant −0.35V vs. Ag/AgCl reference electrode‥ Te deposition potential was varied from −0.55V to −0.4V. Cd was deposited at −0.55V and Te was deposited at −0.8V. The coverage of the films was estimated using the coulometry method. The chemical composition of the films was characterized using Energy-Dispersive X-ray Spectroscopy (EDS) on a Scanning Electron Microscope (SEM). The crystallinity of the films was studied using a glancing angle x-ray diffractometer. The bandgaps of the films were determined using optical reflection data.
Starting Page	002548
Ending Page	002552
File Size	817760
Page Count	5
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318114
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Superlattices Lead Atomic layer deposition Compounds Electric potential Epitaxial growth lead electrochemical process superlattice photovoltaic cells cadmium tellurium
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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