NDLI: Growth of metamorphic GaAsP solar cells on GaP

Content Provider	IEEE Xplore Digital Library
Author	Tomasulo, S. Yaung, K.N. Simon, J. Lee, M.L.
Copyright Year	2012
Description	Author affiliation: Yale University, New Haven, CT, 06511, USA (Tomasulo, S.; Yaung, K.N.; Simon, J.; Lee, M.L.)
Abstract	In this work, we demonstrate metamorphic GaAs/GaP solar cells grown by molecular beam epitaxy for potential dual-junction integration with Si. We investigate the appropriate substrate orientation and growth conditions necessary to obtain smooth surface morphology with high open-circuit voltage (V). Growing nearly identical GaAs/GaP (x=0.65±0.01) cells at three different substrate temperatures allowed us to investigate the dislocation dynamics in the graded buffer, revealing that we are not in the ideal glide-limited regime. We expect this is due to thread interactions with morphological defects. To satisfy the design requirements of the ideal dual-junction device, we grew 1.71 eV GaAs/GaP cells, attaining a high V of 1.15 V. With increased short-circuit current through the addition of a window layer and antireflection coating, the GaAs cells presented here cascaded with Si could reach efficiencies as high as 30%.
Starting Page	001692
Ending Page	001697
File Size	7549761
Page Count	6
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317921
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Silicon Surface morphology Substrates Molecular beam epitaxial growth Morphology Rough surfaces molecular beam epitaxy dual-junction photovoltaic cells GaAsP
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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