NDLI: Study on the device structure of GaInNAs(Sb) based solar cells for use in 4-junction tandem solar cells

Content Provider	IEEE Xplore Digital Library
Author	Miyashita, N. Ahsan, N. Islam, M.M. Okada, Y.
Copyright Year	2012
Description	Author affiliation: Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, 153-8904, Japan (Miyashita, N.; Ahsan, N.; Islam, M.M.; Okada, Y.)
Abstract	We have evaluated n-GaAs/i-GaInNAsSb/p-GaAs (nip) and p-GaAs/i-GaInNAsSb/n-GaAs (pin) solar cells grown by RF-molecular beam epitaxy. The absorption edges of these samples were at around 1180 nm. The currents generated in GaInNAs(Sb) layers, which were calculated from AM 1.5 spectrum and QE spectra at λ > 870 nm region, were 4.6 (nip) and 5.1 (pin) $mA/cm^{2},$ respectively. Illuminated current voltage curves show that the open circuit voltages (V) and FF values were 0.42 V and 0.71, respectively, for both structures. From these measurements, since almost the same PV properties are achieved for both samples, we found no distinct disadvantage to adopt nip structure substituted for pin GaInNAsSb solar cell, although there seems to be some difficulties in carrier collection near by the deep i-GaInNAsSb/p-GaAs interface in nip sample. We observed an enhancement in the filtered current density when GaInNAsSb absorber thickness is increased in nip structure without any degradation of other photovoltaic parameters. In order to further improve filtered current density, increase of GaInNAs(Sb) absorber thickness is necessary.
Starting Page	000954
Ending Page	000956
File Size	456072
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317760
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	RNA Epitaxial growth Gallium arsenide Lattices Artificial intelligence Photovoltaic cells Gain measurement photovoltaic cells dilute nitride semiconductor molecular beam epitaxy
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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