NDLI: Oxidation enhanced diffusion for screen printed silicon solar cells

Content Provider	IEEE Xplore Digital Library
Author	Prajapati, V. Horzel, J. Choulat, P. Janssens, T. Poortmans, J. Mertens, R.
Copyright Year	2012
Description	Author affiliation: imec, Kapeldreef 75, B-3001 Leuven, Belgium (Prajapati, V.; Horzel, J.; Choulat, P.; Janssens, T.; Poortmans, J.; Mertens, R.)
Abstract	If the world's answer to alternative energy production is to be silicon photovoltaics, the fabricated devices need to be produced with the lowest dollar per watt peak. This may be translated to a high efficiency at competitive costs. An easily implementable approach to increase solar cell efficiency without incurring too much cost is to include thermal oxidation [1,2,3,4]. Thermally grown silicon oxide is well known in the microelectronics industry as one of the best dielectrics to passivate silicon surfaces. This paper will focus on two simultaneous properties related to thermal oxidation. The first is the phosphorus emitter and how it can be significantly altered even at low temperatures (800C). The second is passivation due to the thermal oxidation of both front and rear surfaces. A 60 and an 80 Ω/□ emitter (compatible with silver screen printed contact formation) will be investigated with various oxidation conditions using secondary ions mass spectroscopy (SIMS), scanning spreading resistance (SRP), emitter saturation currents (J) as well as final solar cell devices. We report that increasing oxidation significantly decreases phosphorus surface concentration (N) while increasing junction depth. The final cell results show that increasing oxidation increases both open circuit voltage (V) as well as fill factor (FF), however the current density (J) is reduced partly due to front reflection loss. The cells studied in this paper are fabricated on $149cm^{2},$ 155µm thin 1.5 ohm.cm p-type Cz-Si wafers that have screen printed Ag front contacts and a thin thermal oxide on both sides with a rear deposited oxide/nitride stack The highest confirmed efficiency of the cells studied is 19.9% with a Voc of 654mV, Jsc of 38.4 $mA/cm^{2}$ and a fill factor of 79.3%.
Starting Page	001089
Ending Page	001093
File Size	1369396
Page Count	5
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317792
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Oxidation Annealing Photovoltaic cells Reflection Fires Passivation Silicon compounds oxidation enhanced diffusion dry oxidation phosphorus emitter
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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