NDLI: Development of substrate structure CdTe photovoltaic devices with performance exceeding 10%

Content Provider	IEEE Xplore Digital Library
Author	Dhere, R.G. Duenow, J.N. DeHart, C.M. Li, J.V. Kuciauskas, D. Gessert, T.A.
Copyright Year	2012
Description	Author affiliation: National Renewable Energy Laboratory, Golden, CO, USA (Dhere, R.G.; Duenow, J.N.; DeHart, C.M.; Li, J.V.; Kuciauskas, D.; Gessert, T.A.)
Abstract	Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structure, devices with a substrate structure are attractive both commercially and scientifically. The substrate structure eliminates the need for transparent superstrates and thus allows the use of flexible metal and possibly plastic substrates. From a scientific perspective, it allows better control in forming the junction and direct access to the junction for detailed analysis. Research on such devices has been limited. The efficiency of these devices has been limited to around 8% due to low open-circuit voltage (V) and fill factor. In this paper, we present our recent device development efforts at NREL on substrate-structure CdTe devices. We have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. We have worked on a variety of contact materials including Cu-doped ZnTe and CuTe. We will present a comparative analysis of the performance of these contacts. In addition, we have studied the influence of fabrication parameters on junction properties. We will present an overview of our development work, which has led to CdTe devices with V values of more than 860 mV and NREL-confirmed efficiencies approaching 11%.
Starting Page	003208
Ending Page	003211
File Size	815160
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318260
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Performance evaluation Heating Cascading style sheets Helium Adhesives Annealing efficiency CdTe substrate structure devices contacts open-circuit voltage
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Development of substrate structure CdTe photovoltaic devices with performance exceeding 10%

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