NDLI: Selective and homo emitter junction formation using precise dopant concentration control by ion implantation and microwave, laser or furnace annealing techniques

Content Provider	IEEE Xplore Digital Library
Author	Borland, J. Moroz, V. Huang, J. Chen, J. Yao-Jen Lee Oesterlin, P. Venema, P. Geerman, H. Zhao, P. Wang, L.
Copyright Year	2012
Description	Author affiliation: Evans Analytical Group, Sunnyvale, California, USA (Zhao, P.; Wang, L.) \|\| Tempress Systems B.V., Vaassen, the Netherlands (Venema, P.; Geerman, H.) \|\| Kingstone, Shanghai, China (Chen, J.) \|\| J.O.B. Technologies, Aiea, Hawaii, USA (Borland, J.) \|\| National Nano Device Laboratories, Hsinchu, Taiwan (Yao-Jen Lee) \|\| Innovavent GmbH, Gottingen, Germany (Oesterlin, P.) \|\| Synopsys, Mountain View, California, USA (Moroz, V.; Huang, J.)
Abstract	We investigated phosphorus and boon implanted emitter and selective emitter junction formation comparing; 1) 15keV to 30keV implant energies, 2) implant dopant dose concentration between 3E14/cm2 to $1E16/cm^{2}$ and 3) various anneal conditions from high temperature (>1407°C) laser melt annealing to low temperature (<500°C) microwave annealing and furnace anneals between 750°C to 1050°C for dopant activation and diffusion. By engineering and optimizing dopant concentration with anneals we could realize homo emitter and selective emitter junctions from 0.25um to 1.5um depth with sheet resistance from 9Ω/□ to 2200Ω/□ and peak surface dopant electrical activation levels from $4E18/cm^{3}$ up to $5E20/cm^{3}.$ Highest dopant activation efficiency was achieved with liquid phase junction diffusion formation method using laser melt annealing and was limited by the dopant source concentration if $<2E16/cm^{2}.$ The POCl dopant source concentration of $1E16/cm^{2}$ was only 15% efficient with furnace solid phase diffusion activation while laser melt liquid phase diffusion activation was 45% compared to implant which was 35% active with solid phase diffusion and 100% active with liquid phase diffusion.
Starting Page	002132
Ending Page	002137
File Size	1350006
Page Count	6
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318018
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Junctions Implants Solids Masers Liquids Surface emitting lasers solid phase diffusion dopant activation ion implantation laser anneal liquid phase diffusion microwave anneal SIMS analysis
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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