NDLI: Influence of Ge doping on defect distributions of Cu Ge) (S Se) fabricated by nanocrystal ink deposition with selenization

Content Provider	IEEE Xplore Digital Library
Author	Moore, J. Hages, C. Lundstrom, M. Agrawal, R.
Copyright Year	2012
Description	Author affiliation: School of Chemical Engineering, Purdue University, West Lafayette, IN, USA (Hages, C.; Agrawal, R.) \|\| School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA (Moore, J.; Lundstrom, M.)
Abstract	Copper zinc tin sulfide (CZTS) solar cells have recently attracted attention as a potential low cost, earth abundant replacement for CIGS cells. This new thin film material boasts theoretical efficiencies on par with CIGS, but instead uses the relatively common elements zinc and tin rather than the rarer and more expensive indium and gallium. Band gap tuning by adding Ga has been previously used to improve performance for CIGS devices. A mechanism for band gap tuning in CZTS could prove advantageous as well. Recently, the incorporation of germanium in CZTSSe has been shown to provide a potential method for band gap adjustment and may serve as a way to improve the performance of CZTSSe in a manner that is similar to the role of Ga in CIGS. Several experiments are currently being performed to examine this effect on the efficiency of ink based CZTSSe devices. The material parameters of Ge doped CZTSSe have not yet been thoroughly investigated. This paper reports measurements of defect distributions in CZTSSe samples with varying amounts of Ge. The defect energies are compared to those of CZTS and the relation of defects to cell performance is explored.
Starting Page	001475
Ending Page	001480
File Size	1328319
Page Count	6
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317875
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Performance evaluation Materials Voltage measurement Zinc Indexes Tin Equations thin film materials admittance spectroscopy band gap engineering CZTS defect energy levels doping
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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