NDLI: Light-induced degradation in upgraded metallurgical-grade silicon solar cells

Content Provider	IEEE Xplore Digital Library
Author	Ounadjela, K. Sidelkheir, O. Chun-Sheng Jiang Al-Jassim, M.M.
Copyright Year	2012
Description	Author affiliation: Calisolar Inc., 985 Almanor Ave, Sunnyvale, CA 94085, USA (Ounadjela, K.; Sidelkheir, O.) \|\| National Renewable Energy Laboratory; 1617 Cole Blvd.; Golden, CO 80401, USA (Chun-Sheng Jiang; Al-Jassim, M.M.)
Abstract	We report on light-induced degradation (LID) of multicrystalline solar cells made of upgraded metallurgical-grade (UMG) silicon. Cells made of wafers from various locations in an UMG ingot were subjected to LID study. We investigated the kinetics of the LID by measuring changes in the solar cell performance parameters with illumination time and under various illumination intensities; the LID occurred in a logarithmic scale with time. The amount of LID changes with the wafer location, depending on boron and oxygen concentration profiles in the ingot. Further, by mapping the diffusion length using light beam-induced current, we found that the degradation occurred in the bulk of grains in the multicrystalline cells but not at extended defects, such as grain boundaries and dislocations. The LID of UMG-Si is essentially consistent with the literature-reported LID of electronic-grade (EG) Si when it contains high levels of boron and oxygen concentration. Despite the significantly higher levels of many impurities in UMG-Si than in EG-Si, the LID of UMG-Si is dominated by the formation of the boron and oxygen defect complex, which is the mechanism of LID for EG-Si.
Starting Page	002739
Ending Page	002743
File Size	14490697
Page Count	5
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318160
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Silicon Photovoltaic cells Lighting Impurities Pollution measurement Temperature measurement reliability Upgraded metallurgical-grade silicon light-induced degradation solar cells performance
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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