NDLI: Low-resistance earth-abundant metal contacts to nitrogen-doped cuprous oxide thin films

Content Provider	IEEE Xplore Digital Library
Author	Sin Cheng Siah Yun Seog Lee Brandt, R. Buonassisi, T.
Copyright Year	2012
Description	Author affiliation: Massachusetts Institute of Technology, Cambridge, 02139, USA (Sin Cheng Siah; Yun Seog Lee; Brandt, R.; Buonassisi, T.)
Abstract	Formation of low-resistance ohmic contacts to novel earth abundant absorber materials is required to minimize resistive power losses in photovoltaic devices. We first show that the specific contact resistivity (ρ) of 3 inert metals (Au, Ag and Pd) to copper (I) oxide (CuO) thin films can be reduced significantly through the application of a doped CuO functional layer. Specific contact resistivity as low as $1.1×10^{−4}$ $Ω·cm^{2}$ is observed for Pd to nitrogen-doped (N-doped) CuO films. This is the lowest-ever reported ρ to date for CuO films. Temperature-dependent current-voltage (IVT) measurements indicate that thermionic emission dominates for nominally undoped films whilst field emission dominates for N-doped films. Additionally, IVT suggests that ρ does not depend on metal type for N-doped films due to the formation of a tunneling junction. Lastly, we demonstrate that low contact resistivity can be achieved on N-doped CuO films using Earth-abundant metals such as Cu and Ni.
Starting Page	002605
Ending Page	002607
File Size	700606
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318128
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Temperature measurement Conductivity Doping Gold Nickel Thin films Contact resistance Photovoltaic Cells
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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