NDLI: Boron diffused emitter etch back and passivation

Content Provider	IEEE Xplore Digital Library
Author	Xiaoqiang Li Longzhong Tao Zhengyue Xia Zhuojian Yang Jingbing Dong Wentao Song Bin Zhang Sidhu, R. Guoqiang Xing
Copyright Year	2012
Description	Author affiliation: Hareon Solar Technology Co., Ltd. Huangtang Industrial Park, Jiangyin, China, 214407 (Xiaoqiang Li; Longzhong Tao; Zhengyue Xia; Zhuojian Yang; Jingbing Dong; Wentao Song; Bin Zhang; Sidhu, R.; Guoqiang Xing)
Abstract	In this study, a well-controlled etch-back technique was developed using HF and HNO mixture solution to remove the boron depletion layer caused by post-oxidation step. The etching rate can be manipulated by changing HF proportion; meanwhile the sheet resistance variation can be maintained smaller than 10% after etching back. Nitric acid oxidation of Si technique was used to passivate the boron emitter before and after etch back. The presence of the surface boron depletion layer makes the surface boron concentration lower, which is better for low D at the surface after passivation, while it can also introduce extra recombination by making the electron and hole concentration closer at the surface. PC1D was used to simulate the results for further understanding the recombination in the whole emitter region.
Starting Page	001073
Ending Page	001076
File Size	538289
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317789
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hafnium Silicon Q measurement Lead Photovoltaic cells silicon etch back boron diffused emitter passivation
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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