NDLI: (In)GaAsN materials and solar cells for super-high-efficiency multijunction solar cells

Content Provider	IEEE Xplore Digital Library
Author	Yamaguchi, M. Bouzazi, B. Suzuki, H. Ikeda, K. Kojima, N. Ohshita, Y.
Copyright Year	2012
Description	Author affiliation: Toyota Technological Institute, Nagoya 468-8511, Japan (Yamaguchi, M.; Bouzazi, B.; Suzuki, H.; Ikeda, K.; Kojima, N.; Ohshita, Y.)
Abstract	We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program since FY2008 and EU-Japan Collaborative Research on CPV since 2011. In order to realize 40% and 50% efficiency, new approaches for novel materials and structures are being studied. InGaAsN is one of appropriate materials for 4- or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. Present (In)GaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers such as N-H-V, (N-N) and so on, and low carrier mobility due to alloy scattering and non-homogeneity of N. To solve above problems we have been developing the CBE technique. We have focused especially on the N incorporation in GaAsN thin films grown by CBE as a function of growth temperature and substrate orientation. We have also proposed a new flow-rate modulation CBE (FM-CBE) method in order to increase N incorporation and to reduce C and H incorporation in films. By adapting CBE technique to grow (In)GaAsN thin films, higher mobility and longer minority-carrier lifetime compared to those grown by the other growth methods have been achieved. According to these electrical properties, more than 15% efficiency is expected in CBE grown homo junction (In)GaAsN solar cell although only 7.2% efficiency (Jsc=15.1 $mA/cm^{2},$ Voc=0.662 V, FF=0.65) GaAsN single-junction cells have been obtained. To solve above problems, We have characterized deep levels in grown GaAsN films by DLTS and defect behaviors have been clarified.
Starting Page	000831
Ending Page	000834
File Size	1189494
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317732
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Resistance Marine vehicles Concentrator Solar Cells III-V-N CBE Growth Defect Analysis Minority-carrier Lifetime
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in