NDLI: Improvement in short circuit current of p-i-n solar cell with silicon quantum dot superlattice structure by optimizing SiN thickness

Content Provider	IEEE Xplore Digital Library
Author	Rai, D.K.R. Mavilla, N.R. Panchal, A.K. Solanki, C.S.
Copyright Year	2012
Description	Author affiliation: National Centre for Photovoltaic Research and Education, Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai - 400076, India (Mavilla, N.R.) \|\| National Centre for Photovoltaic Research and Education, Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai - 400076, India (Rai, D.K.R.; Solanki, C.S.) \|\| Department of Electrical Engineering, S. V. National Institute of Technology, Ichchanath, Surat - 395007, India (Panchal, A.K.)
Abstract	Superlattice consisting of 10 alternate layers of a-Si with QDs and SiN are incorporated as i-layer in a p-i-n solar cell using HWCVD method. Superlattice with QDs showed absorption coefficient in the range of $∼10^{5}–10^{4}$ $cm^{−1}.$ Calculated optical bandgap of the SL with QDs (∼1.84 eV) is higher than the SL without QDs (∼1.79 eV) and this is attributed to QCE. The cells with QDs showed I= 1.806 µA and V= 25 mV. Increase in I of cells is attributed to increase in tunneling current due to decrease in SiN thickness. Low V has been attributed to the thin SiN layers, the defects and the interface states which result in recombination.
Starting Page	000810
Ending Page	000814
File Size	1067410
Page Count	5
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317727
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Silicon Absorption Photonic band gap Quantum dots Superlattices Dielectrics quantum confinement effect silicon amorphous silicon quantum dot superlattice p-i-n solar cell HWCVD
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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