NDLI: Epitaxy of high aspect ratio and wetting-layer-free InAs quantum dots on (Al)GaAs

Content Provider	IEEE Xplore Digital Library
Author	Freundlich, A. Gunasekera, M. Rajapaksha, C. Rusakova, I.
Copyright Year	2012
Description	Author affiliation: Center for Advanced Materials and Physics Department, Univ. of Houston, TX, 77204-5004 United States (Freundlich, A.; Gunasekera, M.; Rajapaksha, C.) \|\| Texas Center for Superconductivity and Physics Dep., Univ. of Houston, 77204 United States (Rusakova, I.)
Abstract	Here we demonstrate the possibility of the fabrication of high/aspect ratio self-assembled dots that nucleate directly on (Al)GaAs spacers away from their wetting layers. We have carefully monitored the strain anisotropies, their evolution and onsets of 2D–3D transitions by in-situ RHEED and have found that should the growth of InAs be interrupted prior to the 2D–3D transition and a carefully engineered spacer layer of (Al)GaAs be introduced, the subsequent growth of InAs results into the spontaneous formation of high aspect ratio dots without the formation of cumbersome wetting layer. Post growth TEM and AFM observations confirm these finding and reveal that these dots, unlike their conventional counterparts, are highly symmetrical along the <110> directions and exhibit high aspect ratio with low index facets. TEM analyses also confirm that these properties are preserved after the subsequent capping of dots by GaAs or AlGaAs..
Starting Page	001895
Ending Page	001897
File Size	868301
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317963
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Quantum dots Monitoring Strain Indexes Temperature measurement quantum dots MBE growth
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Interface engineered wetting-layer-free InAs quantum dots on GaAs(001)

Optical Properties of InAs/GaAs Quantum Dots Grown by Epitaxy

Self-assembled InAs/GaAs quantum dot molecules with InxGa1−xAs strain-reducing layer

Misfitstrain and growth characteristics of InAs/GaAs quantum dots Grown by molecular beam epitaxy

MBE growth and characterization of InAs quantum dots on strained GaAs buffer layer for application in high efficiency solar cells

Improvement of electron wavefunction symmetry in InAs/GaAs quantum dots embedded in an InGaAs strain-reducing layer

Strain Fields and Transition Energies in Multilayer InAs/GaAs Quantum Dots

Correlation between quantum dot morphology and photovoltaic performance

MBE growth and characteristics of self-assembled InAs/InGaAs/GaAs quantum dots

Epitaxy of high aspect ratio and wetting-layer-free InAs quantum dots on (Al)GaAs

Similar Documents

Interface engineered wetting-layer-free InAs quantum dots on GaAs(001)

Optical Properties of InAs/GaAs Quantum Dots Grown by Epitaxy

Self-assembled InAs/GaAs quantum dot molecules with InxGa1−xAs strain-reducing layer

Misfitstrain and growth characteristics of InAs/GaAs quantum dots Grown by molecular beam epitaxy

MBE growth and characterization of InAs quantum dots on strained GaAs buffer layer for application in high efficiency solar cells

Improvement of electron wavefunction symmetry in InAs/GaAs quantum dots embedded in an InGaAs strain-reducing layer

Strain Fields and Transition Energies in Multilayer InAs/GaAs Quantum Dots

Correlation between quantum dot morphology and photovoltaic performance

MBE growth and characteristics of self-assembled InAs/InGaAs/GaAs quantum dots

Epitaxy of high aspect ratio and wetting-layer-free InAs quantum dots on (Al)GaAs