NDLI: Latest R&D results of Q.antum technology and consideration of symmetrical passivation schemes

Content Provider	IEEE Xplore Digital Library
Author	Bordihn, S. Engelhart, P. Klenke, C. Suva, K. Kaden, T. Dahne, S. Stenzel, F. Zimmermann, G. Wendt, J. Mette, A. Trager, M. Schmidt, S. Fischer, M. Muller, J.W. Kusters, K.H.
Copyright Year	2012
Description	Author affiliation: Q.Cells SE, Sonnenallee 17-21, 06766 Bitterfeld-Wolfen, Germany (Bordihn, S.; Engelhart, P.; Klenke, C.; Suva, K.; Kaden, T.; Dahne, S.; Stenzel, F.; Zimmermann, G.; Wendt, J.; Mette, A.; Trager, M.; Schmidt, S.; Fischer, M.; Muller, J.W.; Kusters, K.H.)
Abstract	In this paper we present the latest R&D results of Q.Cells' high-efficiency solar cell and module concept Q.antum that is currently transferred into mass production. The current work is focused on solar cells and modules produced in our Reiner-Lemoine Research Center. Our optimized rear passivation concept in combination with innovations on the front side of the solar cell resulted in record module efficiencies of 18.5% based on isotropic textured multi-Si substrates. In addition we adopt our Q.antum process on mono-cast (mono-like-multi) Si wafer. These wafers were disposed to an alkaline texturing process and converted into a solar module with record output powers of 283 W. By following the idea of an evolutional cell development a symmetrical passivation that means having the same passivation material on front and rear side could displace cells with different passivation materials on front and rear side. On basis of diffused and non-diffused lifetime test samples we investigate in particular the saturation current density to evaluate the open circuit voltage potential and consequently the feasibility of the evaluated dielectric films for the application as symmetrical passivation scheme. These results were extended by analyzing the implied J-V characteristics to get insights into the feasibility of the investigated passivation schemes.
Starting Page	000678
Ending Page	000681
File Size	432202
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317700
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Passivation Silicon Q measurement Green products Measurement by laser beam Implied J-V characteristics High efficiency multi-Si solar cells and modules Symmetrical surface passivation
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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