NDLI: InGaAs/GaAsP asymmetric quantum wells for enhancing carrier escape through resonant tunneling

Content Provider	IEEE Xplore Digital Library
Author	ShaoJun Ma Sodabanlu, H. YunPeng Wang Watanabe, K. Sugiyama, M. Nakano, Y.
Copyright Year	2012
Description	Author affiliation: Research Center for Advanced Science and Technology, the University of Tokyo, Japan (Sodabanlu, H.; YunPeng Wang; Watanabe, K.) \|\| Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo, Japan (ShaoJun Ma; Sugiyama, M.; Nakano, Y.)
Abstract	In the multiple quantum wells system, deep well supplies wide absorption range. But at the same time, the large band offset would increase the thermionic escape time constant of carriers exponentially. We utilized resonant tunneling effect to assist the carrier collection in InGaAs/GaAsP strain-balanced multiple quantum wells (MQWs). Through the optimization of confinement energy levels and barrier thicknesses, the collection time of photo-generated carriers is calculated to be reduced significantly from several ns to a few hundred ps compared with conventional multiple quantum wells. The asymmetric MQWs for tunneling-assisted carrier escape were fabricated successfully and the carrier collection time was investigated using time-resolved photoluminescence. The advantage of the tunneling design has been confirmed.
Starting Page	001908
Ending Page	001910
File Size	857961
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317966
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum well devices Tunneling Indium gallium arsenide Photovoltaic cells Energy states Gallium arsenide Absorption thermo-tunneling III–V semiconductors photovoltaic cells quantum well
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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