NDLI: Fabrication of selenized/sulfurized Cu(In,Ga)(Se,S) solar cells based on high temperature process using high strain point glass substrate

Content Provider	IEEE Xplore Digital Library
Author	Usui, R. Tomizawa, T. Okato, T. Odaka, H.
Copyright Year	2012
Description	Author affiliation: ASAHI GLASS CO., LTD, Yokohama, Kanagawa, Japan (Usui, R.; Tomizawa, T.; Okato, T.; Odaka, H.)
Abstract	A new high strain point glass substrate for selenized/sulfurized Cu(In,Ga)(Se,S) (CIGS) solar cells was developed. The developed glass has advantages not only higher strain point but also lighter weight and higher mechanical strength than the glass for Plasma Display Panels. CIGS solar cells were fabricated by a selenization/sulfurization 2-step process at high temperature using the developed glass and Soda Lime Glass (SLG) substrates. The SLG needed SiO alkali barrier layer to fabricate CIGS absorber thin film, otherwise delamination occurred. The CIGS fabricated under the high temperatures conditions had better crystal properties, which resulting in higher conversion efficiency than those fabricated at a low temperature of 520 degrees which is commonly used for CIGS solar cells fabrication taking into account the strain point of SLG. The CIGS solar cell fabricated on the developed glass substrate showed higher PV performance than on the SLG with SiO substrate processed on 580 degrees. As a reason of the difference, over 15µm warpage was observed in 30mm length of the SLG substrate, while less than 1µm of warpage occurred in the developed substrate. Our best cell so far is a $0.538-cm^{2}$ aperture-area efficiency 17.5% using the developed substrate adapting 580 degrees of process temperature.
Starting Page	003108
Ending Page	003111
File Size	910064
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318238
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Annealing Glass Fabrication Photonic band gap X-ray scattering Films CIGS high temperature process high strain point glass substrate selenization/sulfurization
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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