NDLI: Microstructure analysis of n-doped μc-SiO:H reflector layers and their implementation in stable a-Si:H p-i-n junctions

Content Provider	IEEE Xplore Digital Library
Author	Babal, P. Blanker, J. Vasudevan, R. Smets, A.H.M. Zeman, M.
Copyright Year	2012
Description	Author affiliation: Delft University of Technology, 2628 CD, the Netherlands (Babal, P.; Blanker, J.; Vasudevan, R.; Smets, A.H.M.; Zeman, M.)
Abstract	Microcrystalline hydrogenated silicon oxide (μc-SiO:H) has been studied as back reflector layers to increase the performance of thin-film silicon solar cells. The nature of the heterogeneous microstructure of μc-SiO:H layers has been studied in more detail. Raman Spectroscopy has been used to study the properties of crystalline silicon grains whereas FTIR spectroscopy has been used to study the amorphous silicon-oxide tissue. The correlations between deposition parameters, the material properties of μc-SiO:H and solar cell performance are discussed. Various μc-SiO:H/Ag back reflectors have been integrated in a-Si:H single junction cells resulting in improved light trapping in the thin film silicon resulting in an initial efficiency of 10.8%. The best stable efficiencies are achieved for cells with an intrinsic a-Si:H film of around 200 nm.
Starting Page	000321
Ending Page	000326
File Size	1654103
Page Count	6
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317627
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Photovoltaic cells Charge carrier processes X-ray scattering Optical films relative stability silicon oxide FTIR Raman light trapping
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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