NDLI: Growth and characterization of III-nitride based multiple quantum wells for photovoltaic devices

Content Provider	IEEE Xplore Digital Library
Author	Wadekar, P.V. Huang, H.C. Chang, C.W. Dung, T.W. Lin, Y.T. Chen, Q.Y. Chou, M.C. Feng, S.W. Tu, L.W. Hu, N.J. Wijesundera, D. Chu, W.K.
Copyright Year	2012
Description	Author affiliation: Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat Sen University, Kaohsiung 80424, Taiwan, China (Wadekar, P.V.; Chang, C.W.; Dung, T.W.; Lin, Y.T.; Chen, Q.Y.; Tu, L.W.) \|\| Department of Materials and Opto-electronic Science, National Sun Yat Sen University, Kaohsiung 80424, Taiwan, China (Huang, H.C.; Chou, M.C.; Hu, N.J.) \|\| Department of Applied Physics, National University of Kaohsiung, 81148, Taiwan, China (Feng, S.W.) \|\| Department of Physics and Texas Center for Superconductivity, University of Houston, USA (Wijesundera, D.; Chu, W.K.)
Abstract	Efficient conversion of solar energy into electricity is crucial to the use of renewable energy. Among the various semiconductors being investigated for photovoltaic conversion, III- nitrides are fervently pursued because of their band gap tenability from 0.65 eV to 3.4 eV by adjusting the indium concentration of InN alloys. This enables the coverage of optical absorption over a wide range of the solar spectrum, thus providing a path to boosting the conversion efficiency. This presentation reports on multiple quantum well (MQW) based solar cells fabricated on LiGaO (00l) substrates by plasma assisted molecular beam epitaxy (PA-MBE). Metal-modulated-epitaxy (MME) technique was utilized to prevent formation of metal droplets during the material growth. Streaky patterns, seen in reflection high energy electron diffraction (RHEED), indicate 2-dimensional (2D) growth throughout the device. Post-deposition characterizations using scanning electron microscopy (SEM) showed smooth surfaces, while X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed the epitaxial nature of the quantum well structure.
Starting Page	001937
Ending Page	001939
File Size	1943247
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317973
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Photovoltaic cells Quantum well devices Diffraction Substrates X-ray diffraction Lattices TEM III-Nitride solar cells multiple quantum wells PA-MBE
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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