NDLI: Industrially feasible casting-mono crystalline solar cells with PECVD AlO rear passivation stack towards 19.6% efficiency

Content Provider	IEEE Xplore Digital Library
Author	Baoming Sun Jian Sheng Shengzhao Yuan Chun Zhang Zhiqiang Feng Qiang Huang
Copyright Year	2012
Description	Author affiliation: State Key Laboratory of PV Science and Technology, Trina Solar Limited Company, ChangZhou, 213031 China (Baoming Sun; Jian Sheng; Shengzhao Yuan; Chun Zhang; Zhiqiang Feng; Qiang Huang)
Abstract	Cost reduction and efficiency gain are the major goals of research and development in crystalline silicon solar cell technology. Casting-mono crystalline silicon produces higher cell efficiencies compared to multi-crystalline silicon material with the same average minority carrier lifetime and with a similarly low production cost. Aluminum oxide provides excellent passivation on crystalline solar cell and has received great research interests in recent years due to combination of chemical passivation and field-effect passivation provided by a large amount of fixed negative charges. In particular, deposition of AlO using ALD or PECVD in PERC structure has been well studied. PECVD is preferred for its fast deposition rate. Our research shows that PECVD AlO films indeed show good passivation quality on casting-mono wafers, which can achieve more than 200µs average lifetime, 700mV implied V and with good stability. Combined with the laser ablation to realize the PERC structure, the PECVD-AlO contributes to a 12mV increase in V compared to the Al-BSF cell. The final cell efficiency reached 19.4% in average with a batch size of 30 wafers and 19.6% for the best cell. Additionally, PECVD AlO can be easily integrated with the current industrial production line at no significant additional cost.
Starting Page	001125
Ending Page	001128
File Size	489635
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317800
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Abstracts Films Lasers Absorption Passivation Thickness measurement Laboratories Casting-mono crystalline silicon PECVD AlOx
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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