NDLI: 19% efficiency heterojunction solar cells on Cz wafers from non-blended Upgraded Metallurgical Silicon

Content Provider	IEEE Xplore Digital Library
Author	Einhaus, R. Kraiem, J. Degoulange, J. Nichiporuk, O. Forster, M. Papet, P. Andrault, Y. Grosset-Bourbange, D. Cocco, F.
Copyright Year	2012
Description	Author affiliation: Apollon Solar, 66 cours Charlemagne, 69002 Lyon, France (Einhaus, R.; Kraiem, J.; Degoulange, J.; Nichiporuk, O.; Forster, M.) \|\| FerroPem, 517 Avenue de la Boisse, 73025, Chambéry, France (Grosset-Bourbange, D.; Cocco, F.) \|\| Roth&Rau Switzerland AG, Rue de la Maladière 23, CH-2000 Neuchatel, Switzerland (Papet, P.; Andrault, Y.)
Abstract	Highly purified n-type UMG (“Upgraded Metallurgical”) Silicon is a material with a strong potential for high efficiency low cost solar cells. Compared to p-type Silicon, n-type Silicon is in general less susceptible to lifetime degradation due to residual metal impurities or to light induced degradation due to the Boron-Oxygen complex. In this work a 15kg 6 inch mono-c Cz Silicon ingot has been grown from 100% highly purified UMG Silicon obtained with the PHOTOSIL process. In this feedstock the Boron and Phosphorus concentrations measured by GDMS were found to be 0.3 ppmw and 2 ppmw, respectively. The resulting ingot is n-type, fully mono $c^{1}$ rystalline and has a resistivity range from 0.2 to 1 ohm.cm. Other impurities, especially metals, were not detectable with the analysis techniques applied (GDMS, ICP-OES). The ingot was cut into 125×125 $mm^{2}$ pseudo square wafers of 180 micron thickness. A first series of solar cells were processed on these wafers using an industrial hetero-junction process by Roth & Rau. The best solar cell from a batch of 14 had an energy conversion efficiency of 19.0% (compared to an average: 18.6%) under standard testing conditions with a very high Voc of 725mV.. An independent confirmation of these results is pending.
Starting Page	003234
Ending Page	003237
File Size	789180
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318266
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Photovoltaic cells Conductivity Boron Impurities Degradation high efficiency cells UMG n-type Cz
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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