NDLI: Numerical modeling of axial junction compositionally graded InN nanorod solar cells

Content Provider	IEEE Xplore Digital Library
Author	Jian-Wei Ho Tay, A.A.O. Soo-Jin Chua
Copyright Year	2012
Description	Author affiliation: NUS Graduate School for Integrative Sciences & Engineering, Singapore 117456 (Jian-Wei Ho) \|\| Singapore-MIT Alliance, National University of Singapore, Singapore 117576 (Soo-Jin Chua) \|\| Department of Mechanical Engineering, National University of Singapore, Singapore 119260 (Tay, A.A.O.)
Abstract	In this work, the performance of compositionally graded axial junction InN nanorod solar cells with an absorber region of InN (Eg∼1.8eV) is examined using the finite element semiconductor device simulation software Taurus Medici from $Synopsys^{®}.$ While nanorod structures can provide significant strain relief resulting in excellent crystalline quality of the typically defect-ridden full-spectrum InGaN ternary semiconductor alloy, we show that other considerations must be taken into account to justify the use of InGaN axial junction nanorods for photovoltaic applications. Without considering light trapping effects, the reduction in junction area can significantly limit the collection efficiency of the nanorods. Further, the greater periphery surface area of the nanorods can lead to substantial increase in surface recombination with significant decline in the short-circuit current density J and the open-circuit voltage V for the simulated device structure. Even with a predefined zero surface recombination velocity, the proximity of the nanorod circumferential surface to the axial junction can lead to electric field fringing effects that degrade the V. In all, surface recombination is found to be the major factor limiting the performance of the InN axial junction nanorod solar cells examined.
Starting Page	001898
Ending Page	001903
File Size	884224
Page Count	6
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317964
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Junctions Photovoltaic cells Photovoltaic systems Electric fields Nanoscale devices Charge carrier processes photovoltaics axial junction compositionally graded finite element simulation indium gallium nitride nanorods
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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