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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wijekoon, K. Mungekar, H. Stewart, M. Kumar, P. Franklin, J. Agrawal, M. Rapolu, K. Fei Yan Yi Zheng Chan, A. Vellaikal, M. Xuesong Lu Kochhar, D. Lin Zhang Tanner, D. Dabeer, V. Ponnekanti, H. |
| Copyright Year | 2012 |
| Description | Author affiliation: Applied Materials, 3535 Garrett Drive, Santa Clara, CA95054, USA (Wijekoon, K.; Mungekar, H.; Stewart, M.; Kumar, P.; Franklin, J.; Agrawal, M.; Rapolu, K.; Fei Yan; Yi Zheng; Chan, A.; Vellaikal, M.; Xuesong Lu; Kochhar, D.; Lin Zhang; Tanner, D.; Dabeer, V.; Ponnekanti, H.) |
| Abstract | An integration process was developed for the fabrication of rear passivated point contact solar cells achieving 19.36% conversion efficiency by using 156×156mm, pseudo square, p-type single crystalline silicon wafers. This is a significant improvement when compared to unpassivated, full area aluminum back surface field solar cells, which exhibit only 18.64% conversion efficiency on the same wafer type. The rear surface was passivated with a Al layer and a SiN capping layer. The thicknesses of individual films were optimized to obtain maximum minority carrier lifetimes. The rear surface contact pattern was created by laser ablation and the contact geometry was optimized to obtain voids free contact filling resulting in a uniform back surface field. Internal quantum efficiency and reflectance measurement show significant improvement in rear passivated cells in the infrared wavelength region in comparison to reference cells. The rear surface internal reflectivity for the passivated cell was 93% while that for the reference cell was only about 73%. The rear surface recombination velocity for the rear passivated cell was about 52 cm/s while that for the reference cell was about 300 cm/s. The efficiency gain in rear passivated cells over the reference cells is mainly due to improved short circuit current and open circuit voltage. However, rear passivated solar cells show lower fill factors due to increased series resistance. |
| Starting Page | 001158 |
| Ending Page | 001162 |
| File Size | 4682908 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781467300643 |
| ISSN | 01608371 |
| e-ISBN | 9781467300667 |
| DOI | 10.1109/PVSC.2012.6317807 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-06-03 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Aluminum Photovoltaic cells Passivation Firing Reflectivity |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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