NDLI: Optical bandgap tuning of ICPCVD-made silicon nanocrystals for next generation photovoltaics

Content Provider	IEEE Xplore Digital Library
Author	Mavilla, N.R. Rai, D.K.R. Solanki, C.S. Vasi, J.
Copyright Year	2012
Description	Author affiliation: National Centre for Photovoltaic Research and Education, IIT Bombay, Mumbai 400 076, India (Mavilla, N.R.; Rai, D.K.R.; Solanki, C.S.; Vasi, J.)
Abstract	Superior optical properties of Si-Nanocrystals (Si-NCs) compared to bulk Si, particularly tunability of bandgap by controlling size, can be exploited for realizing next generation “all-Si” tandem solar cells [1]. In this study, we present optical bandgap tunability of Si-NCs made by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPCVD) using SiO superlattice approach [2]. Deposition time of SiO sublayer, and hence the related thickness (T), was used as a variable parameter to realize Si-NCs of varying sizes. All multilayer (ML) samples were subsequently furnace annealed at 900 °C, to allow for Si-NC formation. Formation of Si-NCs was confirmed by Raman spectroscopy. Transmittance, reflectance and absorptance spectra indicated gradual increase of bandgap with decreasing T. Optical bandgap, E, estimated using Tauc analysis showed an increase in optical bandgap from 1.45 eV to 2.5 eV, as T was varied from 10 nm to 2 nm respectively.
Starting Page	000806
Ending Page	000809
File Size	1105362
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317726
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated optics Optical films Annealing Optical losses Maximum likelihood estimation Phonons Raman Spectroscopy Silicon Nanocrystal Next generation photovoltaics “All-Si” tandem solar cell UV-Vis Spectroscopy ICPCVD
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics

Structural, optical and electrical properties of silicon nanocrystals fabricated by ICPCVD for next generation photovoltaics

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

Silicon nanocrystal nucleation as a function of the annealing temperature in siox films.

Optical characterization of Si films grown on nanostructured Si substrates

Effect of annealing temperature on dark current density of silicon nanocrystals embedded in a nitride matrix for photovoltaic application

Cavity-Q measurements of silica microsphere with nanocrystal Si active layer

Photoluminescence and electroluminescence from B-doped nanocrystal Si/SiO multilayers

Structure and nonlinear refraction of nanocrystal SiC thin films

Optical bandgap tuning of ICPCVD-made silicon nanocrystals for next generation photovoltaics

Similar Documents

Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics

Structural, optical and electrical properties of silicon nanocrystals fabricated by ICPCVD for next generation photovoltaics

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

Silicon nanocrystal nucleation as a function of the annealing temperature in siox films.

Optical characterization of Si films grown on nanostructured Si substrates

Effect of annealing temperature on dark current density of silicon nanocrystals embedded in a nitride matrix for photovoltaic application

Cavity-Q measurements of silica microsphere with nanocrystal Si active layer

Photoluminescence and electroluminescence from B-doped nanocrystal Si/SiO multilayers

Structure and nonlinear refraction of nanocrystal SiC thin films

Optical bandgap tuning of ICPCVD-made silicon nanocrystals for next generation photovoltaics