NDLI: Front contact metallization of Si solar cells: Insights from in-situ X-ray diffraction

Content Provider	IEEE Xplore Digital Library
Author	Imteyaz Ahmad, M. Fields, J.D. Pool, V.L. Yu Jiafan Van Campen, D. Parilla, P.A. Ginley, D.S. van Hest, M.F. Toney, M.F.
Copyright Year	2015
Description	Author affiliation: Stanford Synchrotron Radiat. Lightsource, SLAC Nat. Accel. Lab., Menlo Park, CA, USA (Imteyaz Ahmad, M.; Pool, V.L.; Yu Jiafan; Van Campen, D.; Toney, M.F.) \|\| Nat. Renewable Energy Lab., Golden, CO, USA (Fields, J.D.; Parilla, P.A.; Ginley, D.S.; van Hest, M.F.)
Abstract	The front contact metallization of Si solar cells begins with printing a mixture of an Ag powder, glass frit (mixture of metal oxides such as PbO, $SiO_{2},$ $B_{2}O_{3},$ and $Bi_{2}O_{3})$ and an organic binder over the antireflection coating that is subsequently fired up to about 825 °C. It is known that the frit allows the paste to react with and burn through the anti-reflective coating such that the metal can react with the underlying c-Si during firing. However, the precise phase transformations between Ag, Si, SiNx, and the frit constituents, which happen within a few seconds during rapid thermal processing (RTP), giving rise to an Ag-Si contact, are not well understood in the absence of in-situ characterization under the actual processing conditions. We have carried out in-situ x-ray diffraction studies on sample mixtures of different component powders (Ag, sinks, PbO-fruit and Si) under realistic processing conditions using an in-situ rapid thermal processing setup. We track the phase progression and reaction pathways at a time resolution of 100 milliseconds. We show the direct evidence of SiNx oxidation by PbO between 600-750 °C. On subsequent heating to higher temperature, up to 825 °C, Ag dissolves into the frit etches the c-Si surface and is deposited on etch pits forming intimate electrical contacts.
Starting Page	1
Ending Page	4
File Size	2983817
Page Count	4
File Format	PDF
e-ISBN	9781479979448
DOI	10.1109/PVSC.2015.7355649
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Lead Heating Firing X-ray diffraction Temperature measurement Oxidation in-situ x-ray diffraction Si solar cell metallization
Content Type	Text
Resource Type	Article

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