NDLI: Optoelectronic methods for characterizing uniformity in CIGS thin film solar cells

Content Provider	IEEE Xplore Digital Library
Author	Boone, T.D. Soltz, D. Kinkhabwala, A.A. Zapalac, G. Pinarbasi, M.
Copyright Year	2012
Description	Author affiliation: SoloPower Inc., 5981 Optical Court San Jose, CA, USA (Boone, T.D.; Soltz, D.; Kinkhabwala, A.A.; Zapalac, G.; Pinarbasi, M.)
Abstract	The areal uniformity of electrical characteristics for photovoltaic materials is crucial to achieving maximum efficiency in any solar cell technology. Various techniques have been demonstrated to quantify the planar materials properties for CIGS thin film solar cells. Here we discuss modifications to traditional laser beam induced current (LBIC) and spectral photoluminescence (PL) to quantify the level of macroscopic and microscopic non-uniformity in the device properties. Subsequently, the impact of heterogeneity is analyzed and correlated to both simulated and empirical device performance. It is demonstrated that the application of a DC bias voltage coupled to a typical AC small signal LBIC measurement enables the detection of subtle fluctuations in the JV characteristics across the cell. Thus, regions with lower fundamental Voc will begin to forward bias before the remainder of the device resulting in a fill factor reduction (i.e. weak diode). The bias dependant LBIC technique clearly identifies these lower Voc regions enabling detailed analysis of the mechanism resulting in the variable voltage. High resolution PL has also been used to study the effects of non-uniformity on length scales approaching 1 µm. These results show that the spectral granularity can be significant at this resolution. Comparison of the high resolution spectral PL maps with large area spectrum demonstrates how the non-uniformity must be accounted for when interpreting the intrinsic spectral structure of the absorber layer. Additionally, a SPICE lumped element distributed network simulation is incorporated into the analysis to facilitate the interpretation of the impact on the overall performance.
Starting Page	001732
Ending Page	001735
File Size	966820
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317929
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Silicon SPICE Indexes Indium gallium arsenide Semiconductor devices Performance evaluation semiconductor device modeling Optoelectronic devices photoluminescence photovoltaic cells photodiodes
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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