NDLI: Reliability studies of mo layer deposited on polyimide substrate for CIGS solar cell applications

Content Provider	IEEE Xplore Digital Library
Author	Dung-Ching Perng Ming-Chen Hung Kuo-Yu Wang
Copyright Year	2012
Description	Author affiliation: Institute of Microelectronics and Dept. of Elec. Eng., National Cheng Kung University, One University Road, Tainan 701, Taiwan (Dung-Ching Perng; Ming-Chen Hung; Kuo-Yu Wang)
Abstract	The thermal stress and mechanical induced reliability issues of the Mo layer deposited on polyimide (PI) flexible substrate are studied. We found that the CIGS film cracks after one-hour 400°C selenization process. And the CIGS crack was initiated from the cracking of the Mo film and it can be improved by a Mo annealing process before the precursor deposition. Lower the ramping rate of the selenization temperature and deposit an additional Mo film on the backside of PI substrate can help to improve substrate curving. However, without the Mo annealing, it provides very little improvement on Mo cracking. The annealing improves the Mo cracking resistance. Adding Ag or Al into Mo film reduces film's resistance and improves “failure diameter” down to curvature of 10 mm in tensile stressing tests.
Starting Page	000891
Ending Page	000894
File Size	929758
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317745
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Substrates Resistance Annealing Stress Reliability Photovoltaic cells reliability photovoltaic cells CIGS flexible
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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