NDLI: Characterization of three-dimensional structures in silicon solar cells by spatially-resolved illuminated lock-in thermography

Content Provider	IEEE Xplore Digital Library
Author	Pletzer, T.M. Lenz, M. Windgassen, H. Knoch, J.
Copyright Year	2012
Description	Author affiliation: RWTH Aachen University, Institute of Semiconductor Electronics, Sommerfeldstraße 24, D-52074, Germany (Pletzer, T.M.; Lenz, M.; Windgassen, H.; Knoch, J.)
Abstract	The continuous increase of solar cell efficiencies is related to a large extent to a number of device structure improvements such as the introduction of selective emitters, selective front surface fields (FSF) or local back surface fields (BSF). These structures allow even more complex solar cell designs like passivated emitter and rear contacts/locally diffused (PERC/PERL), metal/emitter wrap through (MWT/EWT) or interdigitated back contact (IBC) cells. All these designs exhibit three-dimensional (3D) doping profiles that are mostly processed with diffusion and are thus not directly visible. In this paper we present a method to characterize these non-visible emitters, FSF and BSF structures in a two-dimensional (2D) camera based spatially-resolved technique, which is based on the illuminated lock-in thermography (ILIT) and free carrier absorption/emission (FCA/FCE). While this technique, also referred to as carrier density imaging (CDI) [1] or infrared lifetime mapping (ILM) [2] and usually used to investigate the wafer material quality, has already been used to investigate phosphorus diffused selective emitter structures [5],[6], here we present to the best of our knowledge the first results of aluminum (Al) alloyed emitters, selective FSF and local Al-BSF structures measured with this method. All spatially-resolved structures were matched with their doping profiles measured with electrochemical capacitance voltage (ECV) measurements. The approach appears very suitable for an in-situ process control of structured emitters, FSFs and BSFs. In principle, patterns with dimensions down to 5 µm can be resolved due to the detected wavelengths (λ) of 3 – 5 µm. We present clearly visible structures with dimensions down to 120 µm on monocrystalline Czochralski silicon (Cz-Si) with a lateral resolution of 30 µm per pixel due to our camera setup. This is suitable for an automatic alignment during contact formation and offers the possibility of quantitative measurements.
Starting Page	001849
Ending Page	001854
File Size	2389802
Page Count	6
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317954
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Area measurement Absorption Imaging Thickness measurement Spatial resolution Materials Gettering free carrier absorption/emission Si solar cells 3D structures spatially-resolved characterization
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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