NDLI: Ion shower doping for emitter fabrication in crystalline Si solar cells

Content Provider	IEEE Xplore Digital Library
Author	Hashiguchi, H. Tachibana, T. Aoki, M. Kojima, T. Ohshita, Y. Ogura, A.
Copyright Year	2012
Description	Author affiliation: Meiji Univ., Kawasaki, 214-8571, Japan (Hashiguchi, H.; Tachibana, T.; Ogura, A.) \|\| Toyota Tech. Inst., Nagoya, 468-8511, Japan (Aoki, M.; Kojima, T.; Ohshita, Y.)
Abstract	We propose ion shower doping technique to fabricate selective emitter structure solar cells. This technique provides large beam area and therefore high through-put. We used the technique to form emitter layer and also selective emitter parts for solar cell devices. From the results, it was confirmed the good electrical properties with uniform conversion efficiency in the wafers. There were no doping damage or contamination observed. In addition, the conversion efficiency of selective emitter cell showed higher than that of conventional cell. We believe that ion shower doping technique is useful to form emitter layer as well as selective emitter parts.
Starting Page	002153
Ending Page	002157
File Size	884113
Page Count	5
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318023
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Furnaces Annealing Ions Abstracts Photovoltaic cells Doping Microwave FET integrated circuits Ion doping selective emitter cell crystalline silicon solar cell
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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