NDLI: Buffer-less Cu(In,Ga)Se solar cells with new transparent electrode for band offset control

Content Provider	IEEE Xplore Digital Library
Author	Minemoto, T. Julayhi, J.
Copyright Year	2012
Description	Author affiliation: Ritusmeikan Univeristy, Kusatsu-City, Shiga 525-8577, Japan (Minemoto, T.; Julayhi, J.)
Abstract	Cu(In,Ga)Se (CIGS) solar cells without buffer layers were fabricated. Typically, CdS, Zn(O,S,OH), or InS buffer layers are used in high efficiency CIGS solar cells to reduce interface recombination. One of the important parameters to obtain high quality interface is the conduction band offset (CBO) between the buffer and CIGS layers. Thus, the choice of the buffer layer material is important. In this study, we have proposed the use of transparent conductive oxide (TCO) which can control the CBO to reduce interface recombination and eliminate the buffer layers. We used Zn(O,S):Al (AZOS) prepared by co-sputtering of ZnO:Al (AZO) and ZnS targets as a novel TCO. The efficiency of a CIGS solar cell with AZO/CIGS/Mo/soda-lime glass structure, i.e. buffer-less structure, was significantly low because of severe shunting. The addition of sulfur into AZO increased shunt resistance, resulting in higher open circuit voltage and efficiency. The result is the first proof of concept of the CIGS solar cells without buffer layers.
Starting Page	001577
Ending Page	001579
File Size	627444
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317895
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indexes Tunneling Substrates Films new structure Cu(In,Ga)Se2 buffer layer transparent conductive oxide
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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