NDLI: Thin film ZnO/Si heterojunction solar cells: Design and implementation

Content Provider	IEEE Xplore Digital Library
Author	Kozarsky, E. Juhyung Yun Chong Tong Xueli Hao Jun Wang Anderson, W.A.
Copyright Year	2012
Description	Author affiliation: Department of Electrical Engineering, University at Buffalo, NY 14260, USA (Kozarsky, E.; Juhyung Yun; Chong Tong; Xueli Hao; Jun Wang; Anderson, W.A.)
Abstract	New approaches are being explored towards a successful thin film ZnO/Si heterojunction solar cell. The current approach involves Al-doped ZnO and microcrystalline Si grown by metal-induced growth. Nanoparticles added to the ZnO layer may introduce plasmonic effects and light scattering. Current work using an Al-ZnO/Buffer/Bulk-Si device has achieved a J of 28.26 $mA/cm^{2},$ a V of 360 mV, and an efficiency of 5.91%. Fabricated Schottky photodiode devices using MIG-Si have achieved a J of around 5.4 $mA/cm^{2}$ and V of 245 mV. According to simulations, an Al-ZnO/MIG-Si device can reach a $J^{SC}$ of 18.54 $mA/cm^{2},$ a V of 670 mV, and an efficiency of 10.359% without plasmonic effects.
Starting Page	001217
Ending Page	001219
File Size	720831
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317821
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Zinc oxide Performance evaluation Photovoltaic cells Nanoparticles Heterojunctions thin films crystalline materials heterojunctions nanoparticles photovoltaic cells silicon
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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