NDLI: Microstructural characterization of front-side Ag contact of crystalline Si solar cells with lightly doped emitter

Content Provider	IEEE Xplore Digital Library
Author	Li, Z.G. Mikeska, K.R. Liang, L. Meisel, A. Scardera, G. Cheng, L.K. VerNooy, P.D. Lewittes, M.E. Lu, M. Gao, F. Zhang, L. Carroll, A.F. Jiang, C.
Copyright Year	2012
Description	Author affiliation: DuPont Central Research and Development, Wilmington, DE 19880-0500, USA (Li, Z.G.; Mikeska, K.R.; Liang, L.; Cheng, L.K.; VerNooy, P.D.; Lewittes, M.E.; Lu, M.; Gao, F.; Zhang, L.) \|\| DuPont Innovalight, Sunnyvale, CA 94085, USA (Meisel, A.; Scardera, G.) \|\| DuPont Electronic Technologies, Research Triangle Park, NC 27709, USA (Carroll, A.F.) \|\| National Renewable Energy Laboratory, Golden, CO 80401, USA (Jiang, C.)
Abstract	Crystalline Si (c-Si) solar cell production has reached an annual scale of ∼20 GW globally. Development of this leading technology has been boosted by continuous innovation in material science and reduced material and processing costs. An example of such innovation is the step-wise progression to more lightly doped emitters (LDE) that reduces recombination in the solar cell. Continuous improvement in front-side (FS) metallization pastes has enabled this progression to lower series resistance and higher cell efficiency. We report here homogeneous emitter LDE cells with efficiencies as high as 18.9%, printed with advanced FS Ag paste. A clear understanding of the microstructure of the interfacial region between Ag contact and Si emitter, and the associated electrical conduction mechanism of LDE cells can provide the guidance needed to drive overall efficiency higher and end-user cost lower. We report our latest investigation of the microstructure of the interface between FS Ag contact and lightly-doped emitter using scanning electron microscopy techniques. The microstructural features such as nano-Ag colloids, interfacial glass, and Ag crystallites are studied in detail. The relationship between microstructure, cell performance, and current conduction mechanism for LDE cells are discussed.
Starting Page	002196
Ending Page	002199
File Size	2974861
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318032
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Glass Silicon Contacts Resistance Conductivity Scanning electron microscopy front-side Ag contact lightly doped emitter current conduction mechanism microstructural investigation
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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