NDLI: Raman measurements on GaN thin films for PV

Content Provider	IEEE Xplore Digital Library
Author	Contreras-Puente, G. Cantarero, A. Recio, J.M. de Melo, O. Hernandez-Cruz, E. de Moure Flores, F. Mendoza-Perez, R. Santana-Rodriguez, G. Aguilar-Hernandez, J. Lopez-Lopez, M. Zamora, L. Escamilla-Esquivel, A.
Copyright Year	2012
Description	Author affiliation: Escuela Superior de Física y Matemáticas del IPN, Edif. 9 UPALM, 07738 México City, México (Contreras-Puente, G.; de Melo, O.; Hernandez-Cruz, E.; de Moure Flores, F.; Aguilar-Hernandez, J.; Escamilla-Esquivel, A.) \|\| Centro de Investigación y de Estudios Avanzados del IPN, Av. IPN 2508, C. P. 07360, México City, Mexico (Lopez-Lopez, M.) \|\| Centro de Investigaciones en Micro- y Nanotecnología, Universidad Veracruzana, Av. Ruiz Cortines 455, Veracruz, México (Zamora, L.) \|\| Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia, Spain (Cantarero, A.; Recio, J.M.) \|\| Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, C.P. 04510, Coyoacán, México (Santana-Rodriguez, G.) \|\| Universidad Autónoma de la Ciudad de México, Av. Prolongación San Isidro 151, Col. San Lorenzo Tezonco, 09790, México (Mendoza-Perez, R.)
Abstract	Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman modes of A, E, and E symmetries. In this work we present and discussed our Raman experiments where particularly the detection of the E and A modes are illustrated in these nitride semiconductor compounds.
Starting Page	000036
Ending Page	000038
File Size	485850
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317563
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Molecular beam epitaxial growth Silicon Gallium nitride Substrates Raman scattering physical optics material properties semiconductor films strain measurements crystal microstructure
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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