NDLI: Correlation between carbon incorporation and defect formation in quasi-single crystalline silicon

Content Provider	IEEE Xplore Digital Library
Author	Tsuchiya, Y. Kusunoki, H. Miyazaki, N. Sameshima, T. Tachibana, T. Kojima, T. Arafune, K. Ohshita, Y. Ono, H. Ogura, A.
Copyright Year	2012
Description	Author affiliation: Meiji University, Kawasaki, Kanagawa 214-8571, Japan (Tsuchiya, Y.; Kusunoki, H.; Miyazaki, N.; Sameshima, T.; Tachibana, T.; Ogura, A.) \|\| Toyota Technological Institute, Nagoya, Aichi 468-8511, Japan (Kojima, T.; Ohshita, Y.) \|\| Kanagawa Industrial Technology Center, Ebina, 243-0435, Japan (Ono, H.) \|\| University of Hyogo, Himeji, 671-2280, Japan (Arafune, K.)
Abstract	We investigated the correlation between C incorporation and defect generation in quasi-single crystalline silicon ingots. The substitutional carbon concentration and etch pit density in the ingot fabricated with atmosphere control to suppress C incorporation were much lower than those in the ingot fabricated without controll. In addition, the precipitates consisted of C, N and Si were confirmed in the ingot fabricated without control. After the precipitation, small-angle grain boundaries (SA-GBs) were generated. We consider that the precipitation were the origin of SA-GBs, therefore the crystalline defect density can be decreased by reducing the incorporation of C impurities during crystal growth.
Starting Page	000297
Ending Page	000301
File Size	961274
Page Count	5
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317622
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Atmospheric measurements Impurities Carbon Atmospheric waves Electronic mail quasi-single crystalline silicon carbon incorporation defect formation precipitate small-angle grain boundary solar cell
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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