NDLI: Quality characterization of silicon bricks using photoluminescence imaging and photoconductive decay

Content Provider	IEEE Xplore Digital Library
Author	Johnston, S. Yan, F. Zaunbrecher, K. Al-Jassim, M. Sidelkheir, O. Ounadjela, K.
Copyright Year	2012
Description	Author affiliation: National Renewable Energy Laboratory; 15013 Denver West Parkway; Golden, CO 80401, USA (Johnston, S.; Yan, F.; Zaunbrecher, K.; Al-Jassim, M.) \|\| Calisolar; 985 Almanor Ave.; Sunnyvale, CA 94085, USA (Sidelkheir, O.; Ounadjela, K.)
Abstract	Imaging techniques can be applied to multicrystalline silicon solar cells throughout the production process, which includes as early as when the bricks are cut from the cast ingot. Photoluminescence (PL) imaging of the band-to-band radiative recombination is used to characterize silicon quality and defects regions within the brick. PL images of the brick surfaces are compared to minority-carrier lifetimes measured by resonant-coupled photoconductive decay (RCPCD). RCPCD is a transient photoconductive decay technique that monitors the recombination of excess carriers using a frequency of about 420 MHz. Carriers are excited by nanosecond laser pulses of long-wavelength light in the range of 1150 nm. The low frequency and long penetration depth of light promote measurement of carriers away from the surface such that lifetimes of up to 100 µs are measured in upgraded-metallurgical-grade silicon, and up to 200 µs in electronic-grade silicon bricks. PL intensity shows correlation to lifetime in addition to the valuable spatial information from top to bottom of the brick and defect regions throughout the brick.
Starting Page	000406
Ending Page	000410
File Size	2903964
Page Count	5
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317645
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Imaging Photoluminescence Correlation Charge carrier lifetime Frequency measurement Wavelength measurement impurities photoluminescence imaging infrared imaging charge-carrier lifetime photoconductivity photovoltaic cells silicon
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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