NDLI: Using amorphous zinc-tin oxide alloys in the emitter structure of CIGS PV devices

Content Provider	IEEE Xplore Digital Library
Author	Hersh, P.A. van Hest, M. Bollinger, V. Berry, J.J. Ginley, D.S. Stanbery, B.J.
Copyright Year	2012
Description	Author affiliation: National Renewable Energy Laboratory, Golden, Colorado, USA (van Hest, M.; Bollinger, V.; Berry, J.J.; Ginley, D.S.) \|\| HelioVolt Corporation, Austin, Texas, USA (Hersh, P.A.; Stanbery, B.J.)
Abstract	The typical CIGS device structure employs a molybdenum back contact and a CdS/ZnO/ZnO:Al emitter structure. In this work the undoped ZnO is replaced with amorphous zinc-tin oxide alloys (ZTO). Varying composition and deposition method of the ZTO can provide a wide range of band gap (3.3–3.9eV) and work function (4.3–5.2eV), while remaining amorphous. The flexibility of the ZTO provides the opportunity to tune the bands to optimize band-edge and Fermi level alignment. Devices demonstrated to date with ZTO alloy composition have yielded a maximum efficiency of 11.9% with an average of 11.3%, which is very similar to comparable devices with undoped ZnO that have a maximum efficiency of 12.0% with an average of 11.3%. On going optimization may further improve the results.
Starting Page	001673
Ending Page	001676
File Size	927447
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317917
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc oxide Films Photonic band gap Radio frequency Tin Sputtering zinc compounds amorphous materials copper compounds photovoltaic cells sputtering tin compounds
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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