NDLI: Novel solution processing of high efficiency earth abundant CZTSSe solar cells

Content Provider	IEEE Xplore Digital Library
Author	Wenbing Yang Hsin-Sheng Duan Bob, B. Bao Lei Sheng-Han Li Yang Yang
Copyright Year	2012
Description	Author affiliation: Department of Materials Science and Engineering, University of California Los Angeles, 90095, USA (Wenbing Yang; Hsin-Sheng Duan; Bob, B.; Bao Lei; Sheng-Han Li; Yang Yang)
Abstract	We present a novel solution-based approach to process CZTSSe absorbers with molecular-level homogeneity. These devices have achieved 8.08 % power conversion efficiency using fully dissolved hydrazine-based CZTS precursor complexes in which each of the elemental constituents are mixed on the molecular level. The nature of the newly developed hydrazine precursor complexes enables a kinetically favorable reaction route to form kesterite CZTS at temperatures as low as 250 °C. Structural and optoelectronic characterization of the as-prepared CZTS films indicates the robustness of this approach in forming single phase Kesterite CZTS with the flexibility to tailor the band gap between 1.0 to 1.5 eV. The low processing temperatures and excellent film homogeneity imply that with further development this technology may be suitable for the large-scale manufacturing of uniform films and high performance devices.
Starting Page	002664
Ending Page	002667
File Size	862958
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6318143
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Zinc Photonic band gap Annealing Photovoltaic cells Additives Earth solution processing solar cells thin film earth abundant CZTS
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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