NDLI: High-quality epitaxial foils, obtained by a layer transfer process, for integration in back-contacted solar cells processed on glass

Content Provider	IEEE Xplore Digital Library
Author	Van Nieuwenhuysen, K. Gordon, I. Bearda, T. Boulord, C. Debucquoy, M. Depauw, V. Dross, F. Govaerts, J. Granata, S. Labie, R. Loozen, X. Martini, R. O'Sullivan, B. Radhakrishnan, H.S. Baert, K. Poortmans, J.
Copyright Year	2012
Description	Author affiliation: Dow Corning, Rue Jules Bordet C, B-7180 Seneffe, Belgium (Boulord, C.) \|\| Imec, Kapeldreef 75, B-3001 Leuven, Belgium (Van Nieuwenhuysen, K.; Gordon, I.; Bearda, T.; Debucquoy, M.; Depauw, V.; Dross, F.; Govaerts, J.; Granata, S.; Labie, R.; Loozen, X.; Martini, R.; O'Sullivan, B.; Radhakrishnan, H.S.; Baert, K.; Poortmans, J.)
Abstract	Foil creation by lifting off a thin layer of a high quality silicon substrate is one of the promising substitutes for wafer sawing to create substrates thinner than 100 µm. The porous silicon-based layer transfer process is a well known method to obtain high quality foils. Despite a number of convincing lab-based solar cell show-cases, there is no breakthrough of this technology at (semi)-industrial level, because of the poor yield of processing free standing foils. This paper presents a method to fabricate back contacted solar cells based on epitaxial foils avoiding processes on free-standing foils. First, a porous silicon layer is electrochemically etched, acting as a weak sacrificial layer to detach the foil that is epitaxially grown on top of the porous silicon layer. Characterization of the epitaxial foils shows a good crystalline quality and an effective lifetime around 100 µs. Those results give indications that the obtained foils are well suited for solar cell fabrication. Front-side processing is done while the epitaxial foil is still attached to its parent substrate. A good yield is obtained for epitaxial foils that underwent the front-side processing sequence consisting of wet chemical texturing, FSF formation, passivation and ARC deposition. Afterwards, the front-side of the foil is bonded to a glass carrier and the foil is detached from its parent substrate. Silicone adhesives are used for this permanent bond. The rear-side of the solar cell is processed while bonded to glass. Therefore, only low temperature processes (<200°C) can be used. So far, the rear-side processing sequence was performed on Float-zone reference wafers as a proof of concept resulting in a confirmed maximum efficiency of 18.4%. The rear-side processing sequence still needs to be applied on epitaxial foils
Starting Page	001833
Ending Page	001836
File Size	1011335
Page Count	4
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317950
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Epitaxial growth Glass Fabrication Packaging Layer transfer Solar cell Silicon Epitaxy Thin foil Porosification
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

High-throughput Si foil technologies at Fraunhofer ISE

600 mV epitaxial crystal silicon solar cells grown on seeded glass

Improving the Quality of Epitaxial Foils Produced Using a Porous Silicon-based Layer Transfer Process for High-Efficiency Thin-Film Crystalline Silicon Solar Cells

Manifold use of growth substrate in the porous silicon-layer transfer-process

Elit Process: Epitaxial Layers for Interdigitated Back Contacts Solar Cells Transferred

Process Development of Silicon Heterojunction Interdigitated Back-Contacted (SHJ-IBC) Solar Cells Bonded to Glass

Fabrication of GaAsN homo-junction solar cells by chemical beam epitaxy

Characterization of epitaxial film silicon solar cells grown on seeded display glass

Macroporous Silicon Solar Cells With an Epitaxial Emitter

High-quality epitaxial foils, obtained by a layer transfer process, for integration in back-contacted solar cells processed on glass

Similar Documents

High-throughput Si foil technologies at Fraunhofer ISE

600 mV epitaxial crystal silicon solar cells grown on seeded glass

Improving the Quality of Epitaxial Foils Produced Using a Porous Silicon-based Layer Transfer Process for High-Efficiency Thin-Film Crystalline Silicon Solar Cells

Manifold use of growth substrate in the porous silicon-layer transfer-process

Elit Process: Epitaxial Layers for Interdigitated Back Contacts Solar Cells Transferred

Process Development of Silicon Heterojunction Interdigitated Back-Contacted (SHJ-IBC) Solar Cells Bonded to Glass

Fabrication of GaAsN homo-junction solar cells by chemical beam epitaxy

Characterization of epitaxial film silicon solar cells grown on seeded display glass

Macroporous Silicon Solar Cells With an Epitaxial Emitter

High-quality epitaxial foils, obtained by a layer transfer process, for integration in back-contacted solar cells processed on glass