NDLI: Raman study of localized recrystallization of amorphous silicon induced by laser beam

Content Provider	IEEE Xplore Digital Library
Author	Tabet, N. Al-Sayoud, A. Said, S. Xiaoming Yang Yang Yang Syed, A. Diallo, E. Zhihong Wang Xianbin Wang Johlin, E. Simmons, C. Buonassisi, T.
Copyright Year	2012
Description	Author affiliation: Massachusetts Institute of Technology, Cambridge 02139, Boston, USA (Johlin, E.; Simmons, C.; Buonassisi, T.) \|\| Nanofabrication Core Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia (Xiaoming Yang; Yang Yang; Syed, A.; Diallo, E.; Zhihong Wang; Xianbin Wang) \|\| KFUPM-MIT Center of Research for Clean Water and Clean Energy (CoR-CWCE), King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia (Tabet, N.; Al-Sayoud, A.; Said, S.)
Abstract	The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter.
Starting Page	000364
Ending Page	000366
File Size	325641
Page Count	3
File Format	PDF
ISBN	9781467300643
ISSN	01608371
e-ISBN	9781467300667
DOI	10.1109/PVSC.2012.6317637
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Substrates Laser beams Power lasers Photovoltaic cells Films Silicon recrystallization amorphous silicon Raman stresses
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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