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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nakajima, K. Kutsukake, K. Fujiwara, K. Usami, N. Ono, S. Yamasaki, Y. |
| Copyright Year | 2010 |
| Description | Author affiliation: Graduate School of Energy Science, Kyoto University, Japan (Nakajima, K.; Kutsukake, K.) || IMR, Tohoku University, Sendai, Japan (Fujiwara, K.; Usami, N.) || Dai-ich Kiden Corporation, Chofu, Japan (Ono, S.) || Sharp Corporation, Katsuragi, Japan (Yamasaki, Y.) |
| Abstract | We have obtained high-efficiency solar cells using 15.6 cm x 15.6 cm size wafers cut from small Si multicrystalline ingots with 30 $cm^{Ø}$ and the height of 7.5 cm, as well as those using 10 cm x 10 cm size wafers [1]. The ingots were grown by controlling the distribution and orientation of dendrite crystals grown along the bottom of the ingots, using the dendritic casting method. The conversion efficiency η of solar cells using the Si wafers was around 17.7 %, and the conversion efficiency was kept high and constant even in a large part (60% for more than η=17% and 80% for more than η=16%) of the small ingot. Therefore, we have made a plan to design and manufacture a large-scale equipment for industrial applications because much high efficiency and high yield can be expected using the large-scale equipment. |
| Starting Page | 000817 |
| Ending Page | 000819 |
| File Size | 541015 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424458905 |
| ISSN | 01608371 |
| e-ISBN | 9781424458929 |
| DOI | 10.1109/PVSC.2010.5617194 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-06-20 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Grain boundaries |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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