NDLI: Thin Si solar cell with N type absorber based on epitaxial lateral overgrowth

Content Provider	IEEE Xplore Digital Library
Author	Ruiying Hao Murcia, C.P. Shreve, K. Lochtefeld, A. Ji-Soo Park Curtin, M. Creazzo, T. Barnett, A.
Copyright Year	2010
Description	Author affiliation: AmberWave Systems Corp, Salem, NH, USA (Lochtefeld, A.; Ji-Soo Park; Curtin, M.) \|\| University of Delaware, Newark, USA (Ruiying Hao; Murcia, C.P.; Shreve, K.; Creazzo, T.; Barnett, A.)
Abstract	Thin silicon (Si) solar cells have the potential of having high performance due to lower bulk recombination which leads to high open circuit voltage [1]. It has been reported that the potential advantages of n type Si include longer lifetime, easier surface passivation, and no light-induced performance degradation [2]. Therefore, a thin Si solar cell structure based on n type absorber is an important area to investigate for higher performance. Thin Si solar cells based on epitaxial lateral overgrowth (ELO) of the n type absorber have been previously reported [3]. Open circuit voltage (Voc) is expected to be improved from utilizing an ELO solar cell due to reduced p-n junction area, which leads to a decrease in the dark saturation current. In this work, planar thin Si solar cells based upon n type epitaxial absorber have been fabricated and initial solar cell results have been analyzed. The processing steps developed for the planar solar cells will be transferred to the ELO solar cells. For the ELO solar cells, a more informative set of patterns have been designed, including different light generation area (A) to p-n junction area (A) ratios, different line orientations and different test patterns. PC1D software has been used to investigate the Voc and efficiency as a function of n type and p type Si absorber thickness, respectively.
Starting Page	003149
Ending Page	003153
File Size	1401890
Page Count	5
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5615875
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	epitaxial later overgrowth thin silicon n type absorber
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in