NDLI: A study into the formation and characterisation of electroless nickel silicide for laser doped solar cells

Content Provider	IEEE Xplore Digital Library
Author	Karpour, A. Wenham, S.R.
Copyright Year	2010
Description	Author affiliation: Centre of Excellence for Advanced Silicon Photovoltaic and Photonics, University of New South Wales, Sydney 2052 Australia (Karpour, A.; Wenham, S.R.)
Abstract	In this paper we will study the formation and characteristics of nickel silicide compounds and the subsequent specific contact resistivity $(Ω.cm^{2})$ during the formation of an ohmic contact in solar cells. Using Transmission Line Method (TLM) we will analyse the electrical characteristics of the formed nickel silicides at different sintering temperatures and durations. In each sintering condition tested, the relationship between the total resistance and the distance between the contact pads on the fabricated test structures is measured and graphed. From these graphs the contact resistance (Ω) and specific contact resistivity $(Ω.cm^{2})$ of the metallisation stack is calculated and tabulated. We conclude the paper by showing the optimum sintering condition of 350°C for three minutes for laser doped solar cells which yields negligible contact resistance.
Starting Page	001406
Ending Page	001409
File Size	592450
Page Count	4
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614402
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nickel Silicides Temperature measurement Silicon Electrical resistance measurement Conductivity Contact resistance
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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