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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Seol, M.S. Kim, D.H. Kwak, D.W. Lee, D.W. Jeong, J.H. Kim, W.S. Cho, H.Y. |
| Copyright Year | 2010 |
| Description | Author affiliation: Department of Physics, Dongguk University, Seoul, 100-715, Korea (Seol, M.S.; Kim, D.H.; Kwak, D.W.; Lee, D.W.; Cho, H.Y.) || Department of Display Engineering Division, Doowon-Tech. College, Korea (Kim, W.S.) || Solar Cell Center, Korea Institute of Science and Technology, Seoul, 136-791, Korea (Jeong, J.H.) |
| Abstract | The suppression effect on deep level defects and the defect generation in Cu(InGa)Se2 solar cells by a proton implantation have been investigated using deep level transient spectroscopy(DLTS) and optical DLTS measurements. CIGS films with the thickness of ∼3µm were grown on a soda-lime glass as substrate by co-sputtering method and implanted by proton with 2× $10^{16}$ $cm^{−3}$ dose and in 50keV energy, and post-annealed under various conditions. To study the proton effect on deep level defects in CIGS films, DLTS and ODLTS were carried out and 5 hole traps and 3 electron traps were found. The calculated trap energies and densities for observed traps were summarized. After proton implantation and post annealing at 200°C for 5 min in N ambient, the deep defects which is known to attribute to loss of the CIGS solar cell efficiency were remarkably reduced in intensity. Therefore, we report that electrical deep level defects in CIGS films can be passivated by proton implantation and post annealing and that a deep level defect with the activation energy of E+0.28 eV generates newly. |
| Starting Page | 002418 |
| Ending Page | 002422 |
| File Size | 985347 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424458905 |
| ISSN | 01608371 |
| e-ISBN | 9781424458929 |
| DOI | 10.1109/PVSC.2010.5614235 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-06-20 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electron traps Protons Photovoltaic cells Films Transient analysis Annealing Junctions |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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