NDLI: Modification of light scattering properties of boron doped zinc oxide grown by Low Pressure Chemical Vapour Deposition using wet chemical etching

Content Provider	IEEE Xplore Digital Library
Author	Calnan, S. David, C. Neumann, A. Papathanasiou, N. Schlatmann, R. Rech, B.
Copyright Year	2010
Description	Author affiliation: Inventux Technologies AG, Wolfener Str. 23, D-12681 Berlin, Germany (David, C.; Neumann, A.; Papathanasiou, N.) \|\| PVcomB (Competence Center for Thin Film and Nanotechnology in Photovoltaics), Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Schwarzschildstr. 3, D-12489, Germany (Calnan, S.; Schlatmann, R.; Rech, B.)
Abstract	The best light scattering properties for ZnO:B films grown by Low Pressure Chemical Vapor Deposition (LPCVD) require low doping in the precursors and films. Such films must be thicker than 2 µm to achieve sheet resistances ≤ 20 Ω/sq, suitable for thin film silicon solar cells. In this study, ZnO:B films, grown by LPCVD with different doping levels, were etched using several solutions so as to modify their surface morphology in a quick and simple way. The haze ratio, at 800 nm, of the films increased from values below 10 % to about 20 % after etching. Observation of the SEM micrographs confirmed that the film surface had been modified by the etching process. Highly doped films could be etched to achieve a high haze while keeping the sheet resistance below 15 Ω/sq. Tandem junctions consisting of amorphous silicon p-i-n and micro-crystalline silicon p-i-n solar cells grown on etched highly doped ZnO:B films exhibited higher open circuit voltage than those on a natively textured lower doped films. Further optimization of both the etching process and the starting ZnO:B material is expected to lead to higher solar cell efficiency. These results show that the optimum thickness of ZnO:B front contacts in thin film silicon can be reduced, potentially cutting production time and material costs.
Starting Page	001474
Ending Page	001478
File Size	1584348
Page Count	5
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614451
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Etching Photovoltaic cells Surface morphology Silicon Resistance
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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