NDLI: 18.5% laser-doped solar cell on CZ p-type silicon

Content Provider	IEEE Xplore Digital Library
Author	Sugianto, A. Bovatsek, J. Wenham, S. Tjahjono, B. Guangqi Xu Yu Yao Hallam, B. Xue Bai Kuepper, N. Chee Mun Chong Patel, R.
Copyright Year	2010
Description	Author affiliation: ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, 2052 Australia (Sugianto, A.; Wenham, S.; Tjahjono, B.; Guangqi Xu; Yu Yao; Hallam, B.; Xue Bai; Kuepper, N.; Chee Mun Chong) \|\| Spectra Physics, a division of Newport Corporation, Santa Clara, CA 95054, United States (Bovatsek, J.; Patel, R.)
Abstract	For many years, the selective emitter approach has been well-known to yield cell efficiencies well above those achieved by conventional screen-printed cells. A simple and effective way of forming a selective emitter can be achieved by laser doping to simultaneously pattern the dielectric with openings as narrow as 8 µm, and create heavy doping beneath the metal contacts. In conjunction with laser doping, light-induced plating (LIP) is seen as an attractive approach for forming metal contacts on the laser-doped regions, without the need for aligning masks or other expensive, long laboratory processes. As laser-doping is gaining increasing interests in the PV industry, selection of the most appropriate laser and processing conditions is important to ensure high yields in a production environment. In this work, we have identified a suitable laser that enables good ohmic contacts for a wide range of laser scan speeds. Sheet resistances of laser-doped lines as low as 2 ohms/sq was achieved at a scan speeds of <1 m/s, while a sufficiently high doping (∼20 ohms/sq) is still achievable at scan speeds up to 6 m/s. Optimization of the laser parameters in this work lead to a cell efficiency of 18.5% being achieved with the laser-doped selective emitter (LDSE) structure. The cell also has an excellent pseudo fill factor (pFF) of 82.3% and a local ideality factor n nearing unity. This indicates there is minimal laser-induced damage and junction recombination as a result of the laser doping process.
Starting Page	000689
Ending Page	000694
File Size	1393273
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616914
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor lasers Optical pumping Atom lasers Junctions Annealing Telescopes
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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