NDLI: InGaP/GaAs/InGaAs 41% concentrator cells using bi-facial epigrowth

Content Provider	IEEE Xplore Digital Library
Author	Wojtczuk, S. Chiu, P. Xuebing Zhang Derkacs, D. Harris, C. Pulver, D. Timmons, M.
Copyright Year	2010
Description	Author affiliation: Independent Consultant, Durham, NC, United States (Timmons, M.) \|\| Spire Semiconductor, Hudson, NH, United States (Wojtczuk, S.; Chiu, P.; Xuebing Zhang; Derkacs, D.; Harris, C.; Pulver, D.)
Abstract	Spire Semiconductor has demonstrated a new bi-facial epigrowth manufacturing process for InGaP/GaAs/InGaAs N/P tandem concentrator cells. NREL has verified $1cm^{2}$ cells as 41.0% efficient at 500X, and 5.5mm cells as 41.4% at 334X, AM1.5D, 25C, matching within measurement error the world record efficiency. A lattice-mismatched 0.94eV InGaAs cell is epitaxially grown on the backside of a lightly doped, N-type GaAs wafer, the epiwafer is flipped in the MOCVD reactor glove box, and 1.42eV GaAs and 1.89eV InGaP cells are grown lattice matched on the opposite wafer surface. Cells are then made using only standard III–V process steps. The bi-facial process is an alternative to the inverted metamorphic (IMM) process. It does not use epitaxial liftoff and wafer bonding as in the IMM approach but does require breaking the growth into two parts and flipping the epiwafer, which we believe is an easier task.
Starting Page	001259
Ending Page	001264
File Size	1963889
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614196
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Variable speed drives Optical buffering
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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